Frequency shift of optical phonons in doped graphene layers

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon coupling and the phonon line width of E$_{2g}$-${\bm Γ}$ and A$'_1$-${\bf K}$ phonons are also performed for graphene multi-layers. Furthermore, we explain the experimentally observed '1/(Number of Layers)' behaviour of the Raman G band position after including the dynamic response treated within time dependent perturbation theory.
4 pages, 3 figures, 1 table

Keywords

Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/125652

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0702627
 http://arxiv.org/abs/cond-mat/0702627

Collections

arXiv