Frequency shift of optical phonons in doped graphene layers

dc.creatorSaha, Srijan Kumar
dc.creatorWaghmare, U. V.
dc.creatorKrishnamurthy, H. R.
dc.creatorSood, A. K.
dc.date2007-02-27
dc.date2007-03-15
dc.date.accessioned2026-07-07T07:51:48Z
dc.date.available2026-07-07T07:51:48Z
dc.descriptionWe use first-principles density-functional calculations to determine the frequency shift of the A$'_1$-${\bf K}$ phonon (Raman D band) in monolayer graphene, as a function of the charge doping. A detailed DFT study on the electron-phonon coupling and the phonon line width of E$_{2g}$-${\bm Γ}$ and A$'_1$-${\bf K}$ phonons are also performed for graphene multi-layers. Furthermore, we explain the experimentally observed '1/(Number of Layers)' behaviour of the Raman G band position after including the dynamic response treated within time dependent perturbation theory.
dc.description4 pages, 3 figures, 1 table
dc.identifierhttps://arxiv.org/abs/cond-mat/0702627
dc.identifierhttp://arxiv.org/abs/cond-mat/0702627
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/125652
dc.subjectMaterials Science
dc.titleFrequency shift of optical phonons in doped graphene layers
dc.typetext

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