The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators
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Dissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is investigated using molecular dynamics simulation. The dependence of the quality factor Q on temperature and the size of the resonator is calculated from direct simulation of the oscillation of a series of Si <001> bars with bare {100} dimerized surfaces. The bar widths range from 3.3 to 8.7nm, all with a fixed length of 22nm. The fundamental mode frequencies range from 40 to 90GHz and Q from 10^2 near 1000K to 10^4 near 50K. The quality factor is shown to be limited by defects in the reconstructed surface.
4 pages, 5 figures
4 pages, 5 figures