The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators

dc.creatorChu, M.
dc.creatorRudd, R. E.
dc.creatorBlencowe, M. P.
dc.date2007-04-30
dc.date.accessioned2026-07-07T07:58:53Z
dc.date.available2026-07-07T07:58:53Z
dc.descriptionDissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is investigated using molecular dynamics simulation. The dependence of the quality factor Q on temperature and the size of the resonator is calculated from direct simulation of the oscillation of a series of Si <001> bars with bare {100} dimerized surfaces. The bar widths range from 3.3 to 8.7nm, all with a fixed length of 22nm. The fundamental mode frequencies range from 40 to 90GHz and Q from 10^2 near 1000K to 10^4 near 50K. The quality factor is shown to be limited by defects in the reconstructed surface.
dc.description4 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0705.0015
dc.identifierhttp://arxiv.org/abs/0705.0015
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128169
dc.subjectMaterials Science
dc.titleThe Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators
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