Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

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The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.

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Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/22372

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0310107
 http://arxiv.org/abs/cond-mat/0310107
 Superlattices Microstruct. 33, 271 (2003)
 doi:10.1016/j.spmi.2004.02.003

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arXiv