Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well

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dc.creatorDolgopolov, V. T.
dc.creatorDeviatov, E. V.
dc.creatorShashkin, A. A.
dc.creatorWieser, U.
dc.creatorKunze, U.
dc.creatorAbstreiter, G.
dc.creatorBrunner, K.
dc.date2003-10-06
dc.date.accessioned2026-07-07T02:53:59Z
dc.date.available2026-07-07T02:53:59Z
dc.descriptionThe small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.
dc.identifierhttps://arxiv.org/abs/cond-mat/0310107
dc.identifierhttp://arxiv.org/abs/cond-mat/0310107
dc.identifierSuperlattices Microstruct. 33, 271 (2003)
dc.identifierdoi:10.1016/j.spmi.2004.02.003
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22372
dc.subjectStrongly Correlated Electrons
dc.titleRemote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
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