Numerical Analysis of the Stub Transistor

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Stubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.
14 pages, 9 figures

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/21189

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0304201
 http://arxiv.org/abs/cond-mat/0304201

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arXiv