Numerical Analysis of the Stub Transistor

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dc.creatorGuerra, Alexandre B.
dc.creatorSantos, Edval J. P.
dc.date2003-04-08
dc.date.accessioned2026-07-07T02:50:41Z
dc.date.available2026-07-07T02:50:41Z
dc.descriptionStubbed waveguides and stub transistors are candidates for next generation electronic devices. In particular, such structures may be used in spintronics-based quantum computation, because of its ability to induce spin-polarized carriers. In this paper, we present the simulation of the conductance of the stub transistor (single and double-gated), modeled with a nearest-neighbor tight-binding Hamiltonian. The oscillatory behavior of the channel conductance with the applied stub voltage is observed.
dc.description14 pages, 9 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0304201
dc.identifierhttp://arxiv.org/abs/cond-mat/0304201
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/21189
dc.subjectMesoscale and Nanoscale Physics
dc.titleNumerical Analysis of the Stub Transistor
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