Atomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction

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dc.creatorYoshida, S.
dc.creatorSekiguchi, T.
dc.creatorItoh, K. M.
dc.date2005-07-11
dc.date.accessioned2026-07-07T07:51:34Z
dc.date.available2026-07-07T07:51:34Z
dc.descriptionWe demonstrate that annealing of a vicinal Si(111) surface at about 800 C with a direct current in the direction that ascends the kinks enhances the formation of atomically straight step edges over micrometer lengths, while annealing with a current in the opposite direction does not. Every straight step edge has the same atomic configuration U(2,0), which is useful as a template for the formation of a variety of nanostructures. A phenomenological model based on electromigration of charged mobile atoms explains the observed current-polarity dependent behavior.
dc.descriptionAccepted for publication in Appl. Phys. Lett. Numbers of pages and figures are 12 and 4, respectively
dc.identifierhttps://arxiv.org/abs/cond-mat/0507232
dc.identifierhttp://arxiv.org/abs/cond-mat/0507232
dc.identifierAppl. Phys. Lett. 87, 031903 (2005)
dc.identifierdoi:10.1063/1.1995946
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/125558
dc.subjectMaterials Science
dc.titleAtomically straight steps on vicinal Si (111) surfaces prepared by step-parallel current in the kink-up direction
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