Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers

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We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.
7 pages, 7 figures; the effect of r3 coupling included; typo corrected

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Materials Science, Strongly Correlated Electrons

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http://salesiana.dossiersoluciones.com/handle/123456789/127942

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0612236
 http://arxiv.org/abs/cond-mat/0612236
 Phys. Rev. B 75, 155115 (2007)
 doi:10.1103/PhysRevB.75.155115

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arXiv