Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers

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dc.creatorMin, Hongki
dc.creatorSahu, B. R.
dc.creatorBanerjee, Sanjay K.
dc.creatorMacDonald, A. H.
dc.date2006-12-10
dc.date2007-04-26
dc.date.accessioned2026-07-07T07:58:15Z
dc.date.available2026-07-07T07:58:15Z
dc.descriptionWe study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.
dc.description7 pages, 7 figures; the effect of r3 coupling included; typo corrected
dc.identifierhttps://arxiv.org/abs/cond-mat/0612236
dc.identifierhttp://arxiv.org/abs/cond-mat/0612236
dc.identifierPhys. Rev. B 75, 155115 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.155115
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/127942
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleAb Initio Theory of Gate Induced Gaps in Graphene Bilayers
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