Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

Kapustin, A. A.; Shashkin, A. A.; Dolgopolov, V. T.; Goiran, M.; Rakoto*, H.; Kvon, Z. D.

Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

Authors

Description

We find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.