Spin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon

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dc.creatorKapustin, A. A.
dc.creatorShashkin, A. A.
dc.creatorDolgopolov, V. T.
dc.creatorGoiran, M.
dc.creatorRakoto*, H.
dc.creatorKvon, Z. D.
dc.date2009-02-05
dc.date.accessioned2026-07-07T13:14:50Z
dc.date.available2026-07-07T13:14:50Z
dc.descriptionWe find that the polarization field, B_chi, obtained by scaling the weak-parallel-field magnetoresistance at different electron densities in a dilute two-dimensional electron system in (111) silicon, corresponds to the spin susceptibility that grows strongly at low densities. The polarization field, B_sat, determined by resistance saturation, turns out to deviate to lower values than B_chi with increasing electron density, which can be explained by filling of the upper electron subbands in the fully spin-polarized regime.
dc.identifierhttps://arxiv.org/abs/0902.0887
dc.identifierhttp://arxiv.org/abs/0902.0887
dc.identifierPhys. Rev. B 79, 205314 (2009)
dc.identifierdoi:10.1103/PhysRevB.79.205314
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/230302
dc.subjectStrongly Correlated Electrons
dc.titleSpin susceptibility and polarization field in a dilute two-dimensional electron system in (111) silicon
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