Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

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Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape.
5 pages, 3 figures, to appear in Appl. Phys. Lett

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Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/124561

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0612413
 http://arxiv.org/abs/cond-mat/0612413
 Appl. Phys. Lett. 90, 033103 (2007)
 doi:10.1063/1.2431760

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arXiv