Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot

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dc.creatorKlein, Levente J.
dc.creatorSavage, Donald E.
dc.creatorEriksson, Mark A.
dc.date2006-12-15
dc.date.accessioned2026-07-07T07:48:37Z
dc.date.available2026-07-07T07:48:37Z
dc.descriptionTransport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward a dot strongly coupled to the leads. In addition to Coulomb blockade, when the dot is strongly coupled to the leads, we observe the appearance of a zero bias conductance peak due to the Kondo effect. The Kondo peak splits in a magnetic field, and the splitting scales linearly with the applied field. We also observe a transition from pure Coulomb blockade to peaks with a Fano lineshape.
dc.description5 pages, 3 figures, to appear in Appl. Phys. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0612413
dc.identifierhttp://arxiv.org/abs/cond-mat/0612413
dc.identifierAppl. Phys. Lett. 90, 033103 (2007)
dc.identifierdoi:10.1063/1.2431760
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124561
dc.subjectMesoscale and Nanoscale Physics
dc.titleCoulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
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