Variable resistance at the boundary between semimetal and excitonic insulator

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We solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.
Latex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in Excitonic Systems

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Strongly Correlated Electrons, Mesoscale and Nanoscale Physics

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http://salesiana.dossiersoluciones.com/handle/123456789/26346

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0505247
 http://arxiv.org/abs/cond-mat/0505247
 Solid State Communications 134, 89 (2005)
 doi:10.1016/j.ssc.2004.07.076

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