Variable resistance at the boundary between semimetal and excitonic insulator

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dc.creatorRontani, Massimo
dc.creatorSham, L. J.
dc.date2005-05-10
dc.date.accessioned2026-07-07T03:05:09Z
dc.date.available2026-07-07T03:05:09Z
dc.descriptionWe solve the two-band model for the transport across a junction between a semimetal and an excitonic insulator. We analyze the current in terms of two competing terms associated with neutral excitons and charged carriers, respectively. We find a high value for the interface resistance, extremely sensitive to the junction transparency. We explore favorable systems for experimental confirmation.
dc.descriptionLatex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in Excitonic Systems
dc.identifierhttps://arxiv.org/abs/cond-mat/0505247
dc.identifierhttp://arxiv.org/abs/cond-mat/0505247
dc.identifierSolid State Communications 134, 89 (2005)
dc.identifierdoi:10.1016/j.ssc.2004.07.076
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/26346
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleVariable resistance at the boundary between semimetal and excitonic insulator
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