Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

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A three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.
4 pages, 4 figures

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Mesoscale and Nanoscale Physics, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/128273

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0606531
 http://arxiv.org/abs/cond-mat/0606531
 Appl. Phys. Lett. 89, 242101 (2006) (3 pages)
 doi:10.1063/1.2402878

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arXiv