Resonant Tunneling Magneto Resistance in Coupled Quantum Wells

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dc.creatorErtler, Christian
dc.creatorFabian, Jaroslav
dc.date2006-06-20
dc.date2006-06-21
dc.date.accessioned2026-07-07T07:59:11Z
dc.date.available2026-07-07T07:59:11Z
dc.descriptionA three barrier resonant tunneling structure in which the two quantum wells are formed by a dilute magnetic semiconductor material (ZnMnSe) with a giant Zeeman splitting of the conduction band is theoretically investigated. Self-consistent numerical simulations of the structure predict giant magnetocurrent in the resonant bias regime as well as significant current spin polarization for a considerable range of applied biases.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606531
dc.identifierhttp://arxiv.org/abs/cond-mat/0606531
dc.identifierAppl. Phys. Lett. 89, 242101 (2006) (3 pages)
dc.identifierdoi:10.1063/1.2402878
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/128273
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleResonant Tunneling Magneto Resistance in Coupled Quantum Wells
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