Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.

Keywords

Mesoscale and Nanoscale Physics

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/209374

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0812.0455
 http://arxiv.org/abs/0812.0455

Collections

arXiv