Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system

Simple item page
dc.creatorMark, S.
dc.creatorGould, C.
dc.creatorPappert, K.
dc.creatorWenisch, J.
dc.creatorBrunner, K.
dc.creatorSchmidt, G.
dc.creatorMolenkamp, L. W.
dc.date2008-12-02
dc.date.accessioned2026-07-07T12:08:36Z
dc.date.available2026-07-07T12:08:36Z
dc.descriptionWe report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.
dc.identifierhttps://arxiv.org/abs/0812.0455
dc.identifierhttp://arxiv.org/abs/0812.0455
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/209374
dc.subjectMesoscale and Nanoscale Physics
dc.titleIndependent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system
dc.typetext

Files

Collections

arXiv