Simple-layered high mobility field effect heterostructured two-dimensional electron device

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We present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.

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Mesoscale and Nanoscale Physics, Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/126446

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0703718
 http://arxiv.org/abs/cond-mat/0703718
 Applied Physics Letters 89, 242107 (2006)

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arXiv