Simple-layered high mobility field effect heterostructured two-dimensional electron device

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dc.creatorWillett, R. L.
dc.creatorPfeiffer, L. N.
dc.creatorWest, K. W.
dc.date2007-03-27
dc.date.accessioned2026-07-07T07:54:01Z
dc.date.available2026-07-07T07:54:01Z
dc.descriptionWe present a two-dimensional electron heterostructure field effect device of simplistic design and ease of fabrication that displays high mobility electron transport. This is accomplished using a high efficacy contacting scheme and simple metallic overlapping gate, obviating dopant layers. The resultant devices demonstrate adjustable electron densities and mobilities larger than 8x106 cm2/V-sec at the highest densities of 2.4x1011/cm2. This device type provides an experimental avenue for studying electron correlations and may answer demands for routine fabrication of practical HEMTs.
dc.identifierhttps://arxiv.org/abs/cond-mat/0703718
dc.identifierhttp://arxiv.org/abs/cond-mat/0703718
dc.identifierApplied Physics Letters 89, 242107 (2006)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/126446
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleSimple-layered high mobility field effect heterostructured two-dimensional electron device
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