Multiple Quantum Well AlGaAs Nanowires

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This letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to non-segmented NWs due to carrier confinement and sidewall passivation.

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Materials Science

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http://salesiana.dossiersoluciones.com/handle/123456789/156332

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0803.0881
 http://arxiv.org/abs/0803.0881
 Nano Lett.; (Letter); 2008; 8(2); 495-499
 doi:10.1021/nl0726306

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arXiv