Multiple Quantum Well AlGaAs Nanowires

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dc.creatorChen, C.
dc.creatorBraidy, N.
dc.creatorCouteau, C.
dc.creatorFradin, C.
dc.creatorWeihs, G.
dc.creatorLaPierre, R.
dc.date2008-03-06
dc.date.accessioned2026-07-07T09:25:13Z
dc.date.available2026-07-07T09:25:13Z
dc.descriptionThis letter reports on the growth, structure and luminescent properties of individual multiple quantum well (MQW) AlGaAs nanowires (NWs). The composition modulations (MQWs) are obtained by alternating the elemental flux of Al and Ga during the molecular beam epitaxy growth of the AlGaAs wire on GaAs (111)B substrates. Transmission electron microscopy and energy dispersive X-ray spectroscopy performed on individual NWs are consistent with a configuration composed of conical segments stacked along the NW axis. Micro-photoluminescence measurements and confocal microscopy showed enhanced light emission from the MQW NWs as compared to non-segmented NWs due to carrier confinement and sidewall passivation.
dc.identifierhttps://arxiv.org/abs/0803.0881
dc.identifierhttp://arxiv.org/abs/0803.0881
dc.identifierNano Lett.; (Letter); 2008; 8(2); 495-499
dc.identifierdoi:10.1021/nl0726306
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156332
dc.subjectMaterials Science
dc.titleMultiple Quantum Well AlGaAs Nanowires
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