0-level Vacuum Packaging RT Process for MEMS Resonators

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dc.creatorAbelé, N.
dc.creatorGrogg, D.
dc.creatorHibert, C.
dc.creatorCasset, F.
dc.creatorAncey, P.
dc.creatorIonescu, A.
dc.date2008-02-21
dc.date.accessioned2026-07-07T09:22:27Z
dc.date.available2026-07-07T09:22:27Z
dc.descriptionA new Room Temperature (RT) 0-level vacuum package is demonstrated in this work, using amorphous silicon (aSi) as sacrificial layer and SiO2 as structural layer. The process is compatible with most of MEMS resonators and Resonant Suspended-Gate MOSFET [1] fabrication processes. This paper presents a study on the influence of releasing hole dimensions on the releasing time and hole clogging. It discusses mass production compatibility in terms of packaging stress during back-end plastic injection process. The packaging is done at room temperature making it fully compatible with IC-processed wafers and avoiding any subsequent degradation of the active devices.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)
dc.identifierhttps://arxiv.org/abs/0802.3093
dc.identifierhttp://arxiv.org/abs/0802.3093
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155380
dc.subjectOther Computer Science
dc.title0-level Vacuum Packaging RT Process for MEMS Resonators
dc.typetext

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