High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

Guerrero, R.; Herranz, D.; Aliev, F. G.; Greullet, F.; Tiusan, C.; Hehn, M.; Montaigne, F.

High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

Authors

Description

Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot-noise shows a Poissonian character. This demonstrates a pure spin dependent direct tunneling mechanism and validates the high structural quality of the MgO barrier.