High Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions

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dc.creatorGuerrero, R.
dc.creatorHerranz, D.
dc.creatorAliev, F. G.
dc.creatorGreullet, F.
dc.creatorTiusan, C.
dc.creatorHehn, M.
dc.creatorMontaigne, F.
dc.date2008-02-25
dc.date.accessioned2026-07-07T09:23:03Z
dc.date.available2026-07-07T09:23:03Z
dc.descriptionLow temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot-noise shows a Poissonian character. This demonstrates a pure spin dependent direct tunneling mechanism and validates the high structural quality of the MgO barrier.
dc.identifierhttps://arxiv.org/abs/0802.3647
dc.identifierhttp://arxiv.org/abs/0802.3647
dc.identifierAppl. Phys. Lett. 91, 132504 (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155594
dc.subjectMesoscale and Nanoscale Physics
dc.titleHigh Bias Voltage Effect on Spin-Dependent Conductivity and Shot Noise in Carbon-doped Fe(001)/MgO(001)/Fe(001) Magnetic Tunnel Junctions
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