Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures

Thumbnail Image

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

Abstract

Description

The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-bandgap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.
4 pages, 5 Figures

Keywords

Materials Science

Citation

URI

http://salesiana.dossiersoluciones.com/handle/123456789/223519

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/0903.2901
 http://arxiv.org/abs/0903.2901

Collections

arXiv