Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures

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dc.creatorSimon, J.
dc.creatorZhang, Z.
dc.creatorGoodman, K.
dc.creatorKosel, T.
dc.creatorFay, P.
dc.creatorJena, D.
dc.date2009-03-17
dc.date.accessioned2026-07-07T12:53:08Z
dc.date.available2026-07-07T12:53:08Z
dc.descriptionThe large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electric fields. The resulting tunnel diodes are more conductive under reverse bias, which has applications for zero-bias rectification and mm-wave imaging. Since interband tunneling is traditionally prohibitive in wide-bandgap semiconductors, these polarization-induced structures and their variants can enable a number of devices such as multijunction solar cells that can operate under elevated temperatures and high fields.
dc.description4 pages, 5 Figures
dc.identifierhttps://arxiv.org/abs/0903.2901
dc.identifierhttp://arxiv.org/abs/0903.2901
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/223519
dc.subjectMaterials Science
dc.titlePolarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
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