Stark effect of shallow impurities in Si

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We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the bandstructure into account. A description as hydrogen-like impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.
11 pages, 5 figures

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Condensed Matter

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http://salesiana.dossiersoluciones.com/handle/123456789/22506

Consulte el texto completo en el siguiente enlace:

https://arxiv.org/abs/cond-mat/0310492
 http://arxiv.org/abs/cond-mat/0310492

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arXiv