Stark effect of shallow impurities in Si

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dc.creatorSmit, G. D. J.
dc.creatorRogge, S.
dc.creatorCaro, J.
dc.creatorKlapwijk, T. M.
dc.date2003-10-21
dc.date.accessioned2026-07-07T02:54:20Z
dc.date.available2026-07-07T02:54:20Z
dc.descriptionWe have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented, taking the bandstructure into account. A description as hydrogen-like impurities was used for accurate computation of energy levels and lifetimes up to large (several MV/m) electric fields. All results are discussed in connection with atomic scale electronics and solid state quantum computation.
dc.description11 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0310492
dc.identifierhttp://arxiv.org/abs/cond-mat/0310492
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/22506
dc.subjectCondensed Matter
dc.titleStark effect of shallow impurities in Si
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